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IXTY12N06T |
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| Part Number | IXTY12N06T |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 85mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable o... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤ 85mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Switch-Mode and Resonant-Mode Power Supplies ·Uninterrupted Power Supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 12 A IDM Drain Current-Single Pulsed 30 A PD Total Dissipation @TC=25℃ 33 W Tj Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature ... |
| Document |
 IXTY12N06T Data Sheet
PDF 260.88KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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