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IXTY1R4N60P |
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| Part Number | IXTY1R4N60P |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor IXTY1R4N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 9.0Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lo... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤ 9.0Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 1.4 A IDM Drain Current-Single Pulsed 2.1 A PD Total Dissipation @TC=25℃ 50 W Tj Operating Junction Tempera... |
| Document |
 IXTY1R4N60P Data Sheet
PDF 262.02KB |
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Desde 2024. D4U Semiconductor.
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