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IXTQ60N10T |
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| Part Number | IXTQ60N10T |
| Manufacturer | IXYS |
| Description | Advance Technical Information TrenchTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTQ60N10T VDSS = 100V ID25 = 60A RDS(on) ≤ 18.0mΩ TO-3P Symbol VDSS VDGR VGSM I... |
| Features |
z 175°C Operating Temperature z Avalanche Rated z Low RDS(on) z Fast Intrinsic Diode z Low Package Inductance
Advantages
z High Power Density z Easy to Mount z Space Savings
Applications
z DC/DC Converters and Off-Line UPS z Primary Switch for 24V and 48V
Systems z High Current Switching Applications z Distributed Power Architechtures
and VRMs z Electronic Valve Train Systems z High Voltage Synchronous Recifier
© 2010 IXYS CORPORATION, All Rights Reserved
DS100289(10/10)
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1 Ciss Coss VG... |
| Document |
 IXTQ60N10T Data Sheet
PDF 170.07KB |
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Desde 2024. D4U Semiconductor.
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