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IXTQ60N20L2 |
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| Part Number | IXTQ60N20L2 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 45mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot ... |
| Features |
·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 45mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 60 A IDM Drain Current-Single Plused 150 A PD Total Dissipation @TC=25℃ 540 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Tem... |
| Document |
 IXTQ60N20L2 Data Sheet
PDF 252.04KB |
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Desde 2024. D4U Semiconductor.
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