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IXTP64N10L2 |
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| Part Number | IXTP64N10L2 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor IXTP64N10L2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 32mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lo... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤ 32mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Current Regulators ·Solid State Circuit Breakers ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 64 IDM Drain Current-Single Pulsed 140 PD Total Dissipation @TC=25℃ 357 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNI... |
| Document |
 IXTP64N10L2 Data Sheet
PDF 246.50KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | IXTP64N10L2 |
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Power MOSFET |
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| 2 | IXTP64N055T |
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| 3 | IXTP64N055T |
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| 4 | IXTP60N10T |
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| 5 | IXTP60N10T |
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| 6 | IXTP60N20T |
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Desde 2024. D4U Semiconductor.
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