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IXTP60N10T |
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| Part Number | IXTP60N10T |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor IXTP60N10T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 18mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤ 18mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Current Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 60 IDM Drain Current-Single Pulsed 180 PD Total Dissipation @TC=25℃ 176 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175... |
| Document |
 IXTP60N10T Data Sheet
PDF 246.82KB |
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Desde 2024. D4U Semiconductor.
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