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IXTP52P10P |
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| Part Number | IXTP52P10P |
| Manufacturer | INCHANGE |
| Description | isc P-Channel MOSFET Transistor IXTP52P10P ·FEATURES ·Static drain-source on-resistance: RDS(on)≤50mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable... |
| Features |
·Static drain-source on-resistance: RDS(on)≤50mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Hight side switching ·Current regulators ·Automatic test equipment ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -52 IDM Drain Current-Single Pulsed -130 PD Total Dissipation @TC=25℃ 300 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTIC... |
| Document |
 IXTP52P10P Data Sheet
PDF 245.25KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IXTP52P10P |
IXYS Corporation |
P-Channel MOSFET |
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| 2 | IXTP50N085T |
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| 3 | IXTP50N085T |
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| 4 | IXTP50N20P |
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| 5 | IXTP50N20P |
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| 6 | IXTP50N20PM |
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Desde 2024. D4U Semiconductor.
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