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IXTP20N65XM |
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| Part Number | IXTP20N65XM |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor IXTP20N65XM ·FEATURES ·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 210mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for ro... |
| Features |
·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 210mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·AC and DC Motor Drives ·Switch-Mode and Resonant-Mode Power Supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 9 IDM Drain Current-Single Pulsed 40 PD Total Dissipation @TC=25℃ 63 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~... |
| Document |
 IXTP20N65XM Data Sheet
PDF 257.24KB |
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Desde 2024. D4U Semiconductor.
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