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IXTH220N055T |
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| Part Number | IXTH220N055T |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 4.0mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot var... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤ 4.0mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Current Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 55 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 220 A IDM Drain Current-Single Pulsed 600 A PD Total Dissipation @TC=25℃ 430 W Tj Operating Junction Temperature -55~175 ℃ Tstg Sto... |
| Document |
 IXTH220N055T Data Sheet
PDF 334.29KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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