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IXTH200N075T |
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| Part Number | IXTH200N075T |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.0mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot var... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤ 5.0mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Current Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 75 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 200 A IDM Drain Current-Single Pulsed 540 A PD Total Dissipation @TC=25℃ 430 W Tj Operating Junction Temperature -55~175 ℃ Tstg Sto... |
| Document |
 IXTH200N075T Data Sheet
PDF 334.08KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IXTH200N075T |
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| 2 | IXTH200N085T |
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| 3 | IXTH200N10T |
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| 4 | IXTH200N10T |
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| 5 | IXTH20N50D |
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| 6 | IXTH20N60 |
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Desde 2024. D4U Semiconductor.
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