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IXTH200N10T |
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| Part Number | IXTH200N10T |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor IXTH200N10T ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.5mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minim... |
| Features |
·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.5mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch-Mode and Resonant-Mode Power Supplies ·DC-DC Converters ·AC and DC Motor Drives ·Robotics and Servo Controls ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 200 A IDM Drain Current-Single Plused 500 A PD Total Dissipa... |
| Document |
 IXTH200N10T Data Sheet
PDF 331.83KB |
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Desde 2024. D4U Semiconductor.
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