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IXTH76N25T |
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| Part Number | IXTH76N25T |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 39mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot vari... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤ 39mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Speed Power Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous IDM Drain Current-Single Pulsed PD Total Dissipation @TC=25℃ Tj Operating Junction Temperature 250 V ±30 V 76 A 170 A 300 W -55~150 ℃ Tstg ... |
| Document |
 IXTH76N25T Data Sheet
PDF 334.93KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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