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IXTC160N10T |
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| Part Number | IXTC160N10T |
| Manufacturer | IXYS |
| Description | Preliminary Technical Information TrenchMVTM IXTC160N10T Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated V= DSS ID25 = RDS(on) ≤ 100 83 7.5 V A mΩ ... |
| Features |
Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature
Advantages Easy to mount Space savings High power density
Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems Distributed Power Architechtures and VRMs Electronic Valve Train Systems High Current Switching Applications High Voltage Synchronous Recifier
© 2006 IXYS CORPORATION All rights reserved
DS99677(11/06)
Symbol
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| Document |
 IXTC160N10T Data Sheet
PDF 187.70KB |
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Desde 2024. D4U Semiconductor.
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