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IXTC200N085T |
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| Part Number | IXTC200N085T |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.0mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable ... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤ 5.0mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Current Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 85 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 200 IDM Drain Current-Single Pulsed 540 PD Total Dissipation @TC=25℃ 480 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SY... |
| Document |
 IXTC200N085T Data Sheet
PDF 246.93KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IXTC200N085T |
IXYS Corporation |
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| 2 | IXTC200N075T |
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| 3 | IXTC200N10T |
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| 4 | IXTC200N10T |
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| 5 | IXTC220N055T |
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| 6 | IXTC220N075T |
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Desde 2024. D4U Semiconductor.
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