IXTC160N10T INCHANGE N-Channel MOSFET Datasheet. existencias, precio

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IXTC160N10T

INCHANGE
IXTC160N10T
IXTC160N10T IXTC160N10T
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Part Number IXTC160N10T
Manufacturer INCHANGE
Description isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 7.0mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable ...
Features
·Static drain-source on-resistance: RDS(on) ≤ 7.0mΩ@VGS=10V
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATION
·DC/DC Converters
·High Current Switching Applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 160 IDM Drain Current-Single Pulsed 430 PD Total Dissipation @TC=25℃ 430 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS S...

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