IXTC110N055T |
Part Number | IXTC110N055T |
Manufacturer | IXYS |
Description | Preliminary Technical Information TrenchMVTM IXTC110N055T Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 55 V 78 A 9.0 mΩ ... |
Features |
Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature
Advantages Easy to mount Space savings High power density
Applications Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications
© 2007 IXYS CORPORATION All rights reserved
DS99673(02/07)
IXTC110N055T
Symbol
gfs Ciss Coss Crss t
d(on)
t r
t d(off)
tf Qg(on) Qgs Qgd RthJC R
thCS
Test Conditions
Characteristic Values
(TJ = 25°C unless othe... |
Document |
IXTC110N055T Data Sheet
PDF 140.36KB |
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