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IXTC75N10 |
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| Part Number | IXTC75N10 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor IXTC75N10 ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static drain-source on-resistance : RDS(on) ≤ 20mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot va... |
| Features |
·Drain Source Voltage- : VDSS= 100V(Min) ·Static drain-source on-resistance : RDS(on) ≤ 20mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 72 IDM Drain Current-Single Pulsed 300 PD Total Dissipation @TC=25℃ 230 Tj Operating Junction Temperature -55~150 Tstg Storage T... |
| Document |
 IXTC75N10 Data Sheet
PDF 247.57KB |
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Desde 2024. D4U Semiconductor.
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