TK11P65W |
Part Number | TK11P65W |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Description | MOSFETs Silicon N-Channel MOS (DTMOS) TK11P65W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.35 Ω (typ.) by used to Super Junction Structu... |
Features |
(1) Low drain-source on-resistance: RDS(ON) = 0.35 Ω (typ.) by used to Super Junction Structure : DTMOS
(2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.45 mA)
3. Packaging and Internal Circuit
TK11P65W
DPAK
1: Gate 2: Drain (Heatsink) 3: Source
Start of commercial production
2014-05
1
2014-09-17
Rev.3.0
TK11P65W
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
650
V
Gate-source voltage
VGSS
±30
Drain current (DC)
(Note 1)
ID
11.1
A
Drain... |
Document |
TK11P65W Data Sheet
PDF 241.23KB |
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