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TK39N60W5 |
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| Part Number | TK39N60W5 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor TK39N60W5 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.074Ω. ·Enhancement mode: Vth =3 to4.5V (VDS = 10 V, ID=1.9mA) ·100% avalanche tested ·Minimum Lot-to-L... |
| Features |
·Low drain-source on-resistance: RDS(on) ≤0.074Ω. ·Enhancement mode: Vth =3 to4.5V (VDS = 10 V, ID=1.9mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 38.8 A IDM Drain Current-Single Pulsed 155 A PD Total Dissipation @TC=25℃ 270 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·... |
| Document |
 TK39N60W5 Data Sheet
PDF 384.04KB |
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Desde 2024. D4U Semiconductor.
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