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TK380P65Y |
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| Part Number | TK380P65Y |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK380P65Y ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.38Ω ·Enhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=0.36mA) ·100% avalanche t... |
| Features |
·Low drain-source on-resistance: RDS(ON) = 0.38Ω ·Enhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=0.36mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 9.7 A IDM Drain Current-Single Pulsed 38.8 A PD Total Dissipation @TC=25℃ 80 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ... |
| Document |
 TK380P65Y Data Sheet
PDF 274.31KB |
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Desde 2024. D4U Semiconductor.
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