TK12A65D |
Part Number | TK12A65D |
Manufacturer | INCHANGE |
Description | iscN-Channel MOSFET Transistor TK12A65D ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.54Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-t... |
Features |
·Low drain-source on-resistance: RDS(ON) = 0.54Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 12 A IDM Drain Current-Single Pulsed 48 A PD Total Dissipation @TC=25℃ 50 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃... |
Document |
TK12A65D Data Sheet
PDF 270.31KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | TK12A65D |
Toshiba Semiconductor |
N-Channel MOSFET | |
2 | TK12A60D |
Toshiba Semiconductor |
N-Channel MOSFET | |
3 | TK12A60D |
INCHANGE |
N-Channel MOSFET | |
4 | TK12A60U |
Toshiba Semiconductor |
N-Channel MOSFET | |
5 | TK12A60U |
INCHANGE |
N-Channel MOSFET | |
6 | TK12A60W |
Toshiba Semiconductor |
N-Channel MOSFET |