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TK12J55D |
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| Part Number | TK12J55D |
| Manufacturer | INCHANGE |
| Description | iscN-Channel MOSFET Transistor TK12J55D ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.57Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-t... |
| Features |
·Low drain-source on-resistance: RDS(ON) = 0.57Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 550 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 12 A IDM Drain Current-Single Pulsed 48 A PD Total Dissipation @TC=25℃ 190 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ... |
| Document |
 TK12J55D Data Sheet
PDF 277.37KB |
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