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IXTA110N12T2 |
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| Part Number | IXTA110N12T2 |
| Manufacturer | IXYS |
| Description | TrenchT2TM Power MOSFET Advance Technical Information IXTA110N12T2 IXTP110N12T2 VDSS = 120V ID25 = 110A RDS(on) 14m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263AA... |
| Features |
International Standard Packages 175°C Operating Temperature Avalanche Rated Low RDS(on) Fast Intrinsic Rectifier High Current Handling Capability Advantages Easy to Mount Space Savings High Power Density Applications Synchronous Rectification DC/DC Converters and Off-Line UPS Primary- Side Switch High Current Switching Applications © 2017 IXYS CORPORATION, All Rights Reserved DS100830A(5/17) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5 • ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(on) tr td(off) tf ... |
| Document |
 IXTA110N12T2 Data Sheet
PDF 212.52KB |
Similar Datasheet
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| 1 | IXTA110N12T2 |
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| 2 | IXTA110N055P |
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Desde 2024. D4U Semiconductor.
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