IXTA110N055P |
Part Number | IXTA110N055P |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤13.5mΩ ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations ... |
Features |
·Static drain-source on-resistance: RDS(on) ≤13.5mΩ ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 55 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 110 A IDM Drain Current-Single Pulsed 250 A PD Total Dissipation @TC=25℃ 330 W Tj Operating Junction Temperature -... |
Document |
IXTA110N055P Data Sheet
PDF 250.14KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IXTA110N055P |
IXYS Corporation |
PolarHT Power MOSFET | |
2 | IXTA110N055T |
IXYS Corporation |
Power MOSFET | |
3 | IXTA110N055T |
INCHANGE |
N-Channel MOSFET | |
4 | IXTA110N055T2 |
IXYS |
Power MOSFET | |
5 | IXTA110N055T7 |
IXYS Corporation |
Power MOSFET | |
6 | IXTA110N12T2 |
INCHANGE |
N-Channel MOSFET |