IXTA10N60P |
Part Number | IXTA10N60P |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 740mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot var... |
Features |
·Static drain-source on-resistance: RDS(on) ≤ 740mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Switch-Mode and Resonant-Mode Power Supplies ·Uninterrupted Power Supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 10 IDM Drain Current-Single Pulsed 25 PD Total Dissipation @TC=25℃ 200 Tj Operating Junction Temperature -55~1... |
Document |
IXTA10N60P Data Sheet
PDF 250.68KB |
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