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IXTA5N60P |
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| Part Number | IXTA5N60P |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 1.7Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot vari... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤ 1.7Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 5 IDM Drain Current-Single Pulsed 10 PD Total Dissipation @TC=25℃ 100 Tj Operating Junction Temperature -55~150 Tstg St... |
| Document |
 IXTA5N60P Data Sheet
PDF 250.36KB |
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Desde 2024. D4U Semiconductor.
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