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IXFY8N65X2 |
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| Part Number | IXFY8N65X2 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 650V(Min) ·Static drain-source on-resistance: RDS(on) ≤ 450mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100%... |
| Features |
·Drain Source Voltage- : VDSS= 650V(Min) ·Static drain-source on-resistance: RDS(on) ≤ 450mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% Avalanche Tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Switched mode power supplies ·DC-DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 8 A IDM Drain Current-Single Pulsed 16 A PD Total Dissipation @TC=25℃ 150 W Tj Operating Junction Te... |
| Document |
 IXFY8N65X2 Data Sheet
PDF 261.53KB |
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Desde 2024. D4U Semiconductor.
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