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IXFP30N60X |
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| Part Number | IXFP30N60X |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor IXFP30N60X ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 15 5mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% Avalanche Tested ·Minimum L... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤ 15 5mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% Avalanche Tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Switched mode power supplies ·DC-DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 30 IDM Drain Current-Single Pulsed 60 PD Total Dissipation @TC=25℃ 500 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT... |
| Document |
 IXFP30N60X Data Sheet
PDF 246.42KB |
Similar Datasheet
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