IXFH60N65X2 |
Part Number | IXFH60N65X2 |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) ≤ 52mΩ@VGS= 10V ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-... |
Features |
·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) ≤ 52mΩ@VGS= 10V ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Easy to Mount ·Space Savings ·High Power Density ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 60 A IDM Drain Current-Single Plused 120 A PD Total Dissipation @TC=25℃ 780 W Tj Max. Operating Junction Temperature -55... |
Document |
IXFH60N65X2 Data Sheet
PDF 333.03KB |
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