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IXFH22N65X2 |
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| Part Number | IXFH22N65X2 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXFH22N65X2 ·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device ... |
| Features |
·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGSS Gate-Source Voltage ±30 V ID Drain Current-Continuous 22 A IDM Drain Current-Single Pulsed 44 A PD Total Dissipation 390 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Chan... |
| Document |
 IXFH22N65X2 Data Sheet
PDF 319.61KB |
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