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IRL520N |
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| Part Number | IRL520N |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤ 180mΩ (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robu... |
| Features |
·Low drain-source on-resistance: RDS(on) ≤ 180mΩ (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·It is intended for general purpose switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±16 ID Drain Current-Continuous 8.1 IDM Drain Current-Single Pulsed 35 PD Total Dissipation @TC=25℃ 30 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A... |
| Document |
 IRL520N Data Sheet
PDF 250.28KB |
Desde 2024. D4U Semiconductor.
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