IRFB3607 |
Part Number | IRFB3607 |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB3607 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤9.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum L... |
Features |
·Static drain-source on-resistance: RDS(on) ≤9.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 75 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 80 A IDM Drain Current-Single Pulsed 310 A PD Total Dissipation @TC=25℃ 140 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature ... |
Document |
IRFB3607 Data Sheet
PDF 257.33KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IRFB3607 |
INCHANGE |
TO-220 N-Channel MOSFET | |
2 | IRFB3607GPBF |
International Rectifier |
Power MOSFET | |
3 | IRFB3607PBF |
International Rectifier |
Power MOSFET | |
4 | IRFB3004 |
INCHANGE |
N-Channel MOSFET | |
5 | IRFB3004GPbF |
International Rectifier |
Power MOSFET | |
6 | IRFB3004PBF |
International Rectifier |
Power MOSFET |