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IRF9Z34NL |
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| Part Number | IRF9Z34NL |
| Manufacturer | INCHANGE |
| Description | isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤100mΩ(@VGS= -10V; ID= -10A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variat... |
| Features |
·Static drain-source on-resistance: RDS(on)≤100mΩ(@VGS= -10V; ID= -10A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching application. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous PD Total Dissipation @TC=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance IRF9Z34NL VA... |
| Document |
 IRF9Z34NL Data Sheet
PDF 225.06KB |
Similar Datasheet
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| 1 | IRF9Z34N |
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| 2 | IRF9Z34N |
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| 3 | IRF9Z34NL |
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| 4 | IRF9Z34NLPBF |
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| 6 | IRF9Z34NS |
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Desde 2024. D4U Semiconductor.
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