IPI041N12N3 |
Part Number | IPI041N12N3 |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.1mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d... |
Features |
·Static drain-source on-resistance: RDS(on) ≤4.1mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 120 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 120 A IDM Drain Current-Single Pulsed 480 A PD Total Dissipation @TC=25℃ 300 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Tem... |
Document |
IPI041N12N3 Data Sheet
PDF 282.42KB |
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