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IPI037N08N3 |
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| Part Number | IPI037N08N3 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPI037N08N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.75mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minim... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤3.75mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 80 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 100 A IDM Drain Current-Single Pulsed 400 A PD Total Dissipation @TC=25℃ 214 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperatur... |
| Document |
 IPI037N08N3 Data Sheet
PDF 256.67KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPI037N08N3 |
Infineon |
Power Transistor |
|
| 2 | IPI037N08N3G |
Infineon Technologies |
Power-Transistor |
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| 3 | IPI037N06L3 |
Infineon |
Power-Transistor |
|
| 4 | IPI037N06L3G |
Infineon |
Power Transistor |
|
| 5 | IPI030N10N3 |
INCHANGE |
N-Channel MOSFET |
|
| 6 | IPI030N10N3 |
Infineon |
Power Transistor |
|
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