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IPB021N06N3G |
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| Part Number | IPB021N06N3G |
| Manufacturer | INCHANGE |
| Description | Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-... |
| Features |
·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 120 PD Total Dissipation @TC=25℃ 250 Tj Max. Operating Junction Temperature -55~175 Tstg Storage Temperature -5~175 UNIT V V A W ℃ ℃ ·THERMAL CHARACTERIS... |
| Document |
 IPB021N06N3G Data Sheet
PDF 225.07KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPB021N06N3 |
Infineon |
Power Transistor |
|
| 2 | IPB021N06N3G |
Infineon Technologies |
Power-Transistor |
|
| 3 | IPB020N08N5 |
Infineon |
MOSFET |
|
| 4 | IPB020N10N5 |
Infineon |
MOSFET |
|
| 5 | IPB020N10N5 |
INCHANGE |
N-Channel MOSFET |
|
| 6 | IPB020N10N5LF |
INCHANGE |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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