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IPAN60R650CE |
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| Part Number | IPAN60R650CE |
| Manufacturer | INCHANGE |
| Description | Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPAN60R650CE ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conductio... |
| Features |
·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 9.9 A IDM Drain Current-Single Plused 19 A PD Total Dissipation @TC=25℃ 28 W Tj Max. Operating Junction Temperature -40~150 ℃ Tstg St... |
| Document |
 IPAN60R650CE Data Sheet
PDF 218.25KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPAN60R650CE |
Infineon |
MOSFET |
|
| 2 | IPAN60R800CE |
Infineon |
MOSFET |
|
| 3 | IPAN60R800CE |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IPAN65R650CE |
Infineon |
MOSFET |
|
| 5 | IPAN50R500CE |
Infineon |
MOSFET |
|
| 6 | IPAN50R500CE |
INCHANGE |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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