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IPA60R800CE |
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| Part Number | IPA60R800CE |
| Manufacturer | INCHANGE |
| Description | INCHANGE Semiconductor Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F Package ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max) ·100% avalanche... |
| Features |
·With TO-220F Package ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ 8.4 5.3 A IDM Drain Current-Single Pulsed 15.7 A PD Total Dissipation @TC=25℃ 27 W Tj Max. Operating Junction Temperature -... |
| Document |
 IPA60R800CE Data Sheet
PDF 221.50KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPA60R800CE |
Infineon Technologies |
MOSFET |
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| 2 | IPA60R060C7 |
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MOSFET |
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| 3 | IPA60R060P7 |
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Power-Transistor |
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| 4 | IPA60R060P7 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 5 | IPA60R080P7 |
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| 6 | IPA60R099C6 |
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|
Desde 2024. D4U Semiconductor.
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