IPA60R600P6 |
Part Number | IPA60R600P6 |
Manufacturer | INCHANGE |
Description | INCHANGE Semiconductor Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F Package ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) ·100% avalanche... |
Features |
·With TO-220F Package ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ 7.3 4.6 A IDM Drain Current-Single Pulsed 18 A PD Total Dissipation @TC=25℃ 28 W Tj Max. Operating Junction Temperature -55... |
Document |
IPA60R600P6 Data Sheet
PDF 221.15KB |
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