IPA60R360P7 |
Part Number | IPA60R360P7 |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor IPA60R360P7 ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.36Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for ... |
Features |
· Drain-source on-resistance: RDS(on) ≤ 0.36Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High switching Power Supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 9 IDM Drain Current-Single Pulsed 26 PD Total Dissipation @TC=25℃ 22 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYM... |
Document |
IPA60R360P7 Data Sheet
PDF 232.83KB |
Similar Datasheet
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1 | IPA60R360P7 |
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2 | IPA60R360P7S |
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3 | IPA60R330P6 |
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