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IPA037N08N3 |
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| Part Number | IPA037N08N3 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor IPA037N08N3,IIPA037N08N3 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤3.7mΩ (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to... |
| Features |
·Low drain-source on-resistance: RDS(on) ≤3.7mΩ (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 80 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 75 IDM Drain Current-Single Pulsed 300 PD Total Dissipation @TC=25℃ 41 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·... |
| Document |
 IPA037N08N3 Data Sheet
PDF 251.42KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPA037N08N3 |
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| 2 | IPA037N08N3G |
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| 3 | IPA030N10N3 |
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| 4 | IPA030N10N3 |
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| 5 | IPA030N10N3G |
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| 6 | IPA030N10NF2S |
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Desde 2024. D4U Semiconductor.
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