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FDPF3860T |
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| Part Number | FDPF3860T |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor FDPF3860T ·FEATURES ·With TO-220F packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Static drain-source on-resistance: RDS(on) ≤ 38.2mΩ@VGS=10V ·100% avalanche tested ·... |
| Features |
·With TO-220F packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Static drain-source on-resistance: RDS(on) ≤ 38.2mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 20 A IDM Drain Current-Single Pulsed 80 A PD Total Dissipation 33.8 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage ... |
| Document |
 FDPF3860T Data Sheet
PDF 270.18KB |
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Desde 2024. D4U Semiconductor.
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