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FDPF085N10A |
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| Part Number | FDPF085N10A |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor FDPF085N10A ·FEATURES ·With TO-220F packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Static drain-source on-resistance: RDS(on) ≤ 8.5mΩ@VGS=10V ·100% avalanche tested ... |
| Features |
·With TO-220F packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Static drain-source on-resistance: RDS(on) ≤ 8.5mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 40 A IDM Drain Current-Single Pulsed 160 A PD Total Dissipation 33.3 W Tj Operating Junction Temperature -55~175 ℃ Tstg Storage ... |
| Document |
 FDPF085N10A Data Sheet
PDF 270.13KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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