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FDP3632 |
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| Part Number | FDP3632 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥100V ·Static drain-source on-resistance: RDS(on) ≤ 9mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-L... |
| Features |
·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥100V ·Static drain-source on-resistance: RDS(on) ≤ 9mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 80 A PD Total Dissipation 310 W Tj Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTIC... |
| Document |
 FDP3632 Data Sheet
PDF 278.73KB |
Similar Datasheet
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| 1 | FDP3632 |
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| 2 | FDP3632 |
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| 3 | FDP3651U |
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| 4 | FDP3651U |
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Desde 2024. D4U Semiconductor.
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