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FDP16AN08A0 |
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| Part Number | FDP16AN08A0 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 75V ·Static drain-source on-resistance: RDS(on) ≤ 16mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-... |
| Features |
·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 75V ·Static drain-source on-resistance: RDS(on) ≤ 16mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 75 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 58 A PD Total Dissipation 135 W Tj Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTIC... |
| Document |
 FDP16AN08A0 Data Sheet
PDF 279.15KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | FDP16AN08A0 |
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N-Channel MOSFET |
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| 2 | FDP16N50 |
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| 3 | FDP100N10 |
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| 4 | FDP100N10 |
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| 5 | FDP10AN06A0 |
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| 6 | FDP10N50F |
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Desde 2024. D4U Semiconductor.
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