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FDI036N10A |
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| Part Number | FDI036N10A |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor FDI036N10A ·FEATURES ·With TO-262 packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Static drain-source on-resistance: RDS(on) ≤ 4.5mΩ@VGS=10V ·100% avalanche tested ·M... |
| Features |
·With TO-262 packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Static drain-source on-resistance: RDS(on) ≤ 4.5mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 164 A IDM Drain Current-Single Pulsed 656 A PD Total Dissipation 263 W Tj Operating Junction Temperature -55~175 ℃ Tstg Storage T... |
| Document |
 FDI036N10A Data Sheet
PDF 317.28KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDI030N06 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 2 | FDI038AN06A0 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 3 | FDI038AN06A0 |
ON Semiconductor |
N-Channel MOSFET |
|
| 4 | FDI025N06 |
Fairchild Semiconductor |
MOSFET |
|
| 5 | FDI040N06 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 6 | FDI045N10A |
ON Semiconductor |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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