FCPF190N65FL1 |
Part Number | FCPF190N65FL1 |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor FCPF190N65FL1 ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minim... |
Features |
·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 20.6 A IDM Drain Current-Single Pulsed 61.8 A PD Total Dissipation 39 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Tempera... |
Document |
FCPF190N65FL1 Data Sheet
PDF 243.46KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FCPF190N65FL1 |
Fairchild Semiconductor |
N-Channel MOSFET | |
2 | FCPF190N65FL1-F154 |
ON Semiconductor |
N-Channel MOSFET | |
3 | FCPF190N65F |
ON Semiconductor |
N-Channel MOSFET | |
4 | FCPF190N65S3L1 |
ON Semiconductor |
Power MOSFET | |
5 | FCPF190N65S3R0L |
ON Semiconductor |
N-Channel MOSFET | |
6 | FCPF190N60 |
ON Semiconductor |
N-Channel MOSFET |