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FCP16N60N |
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| Part Number | FCP16N60N |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor FCP16N60N ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lo... |
| Features |
·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±30 V ID Drain Current-Continuous;@Tc=25℃ 16 A IDM Drain Current-Single Pulsed 48 A PD Total Dissipation 134.4 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperatu... |
| Document |
 FCP16N60N Data Sheet
PDF 252.77KB |
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Desde 2024. D4U Semiconductor.
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