FCP11N60N |
Part Number | FCP11N60N |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot va... |
Features |
·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±30 V ID Drain Current-Continuous;@Tc=25℃ 10.8 Tc=100℃ 6.8 A IDM Drain Current-Single Pulsed 32.4 A PD Total Dissipation 94 W Tj Operating Junction Temperature -55~150 ℃ Tstg St... |
Document |
FCP11N60N Data Sheet
PDF 252.75KB |
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