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DMG3N60SCT |
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| Part Number | DMG3N60SCT |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor DMG3N60SCT ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 3.5Ω ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot ... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤ 3.5Ω ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Motor Control ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 3.3 IDM Drain Current-Single Pulsed 3.7 PD Total Dissipation @TC=25℃ 104 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMA... |
| Document |
 DMG3N60SCT Data Sheet
PDF 246.53KB |
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Desde 2024. D4U Semiconductor.
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